Simulation of dislocation accumulation in ULSI cells during the formation of thermal oxide film
Ultra Large Scale Integration (ULSI) are usually realized by a reduction of the size and high integration of semiconductor devices. In recent years, representative length scale of ULSI cells is going to be at a nanometre order. Several atomic level problems like a generation of lattice defects are t...
Main Authors: | , , , |
---|---|
Format: | Article |
Language: | Japanese |
Published: |
The Japan Society of Mechanical Engineers
2015-12-01
|
Series: | Nihon Kikai Gakkai ronbunshu |
Subjects: | |
Online Access: | https://www.jstage.jst.go.jp/article/transjsme/82/833/82_15-00457/_pdf/-char/en |