Simulation of dislocation accumulation in ULSI cells during the formation of thermal oxide film
Ultra Large Scale Integration (ULSI) are usually realized by a reduction of the size and high integration of semiconductor devices. In recent years, representative length scale of ULSI cells is going to be at a nanometre order. Several atomic level problems like a generation of lattice defects are t...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | Japanese |
| Published: |
The Japan Society of Mechanical Engineers
2015-12-01
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| Series: | Nihon Kikai Gakkai ronbunshu |
| Subjects: | |
| Online Access: | https://www.jstage.jst.go.jp/article/transjsme/82/833/82_15-00457/_pdf/-char/en |