Three-terminal semiconductor junction thermoelectric devices: improving performance
A three-terminal thermoelectric device based on a p–i–n semiconductor junction is proposed, where the intrinsic region is mounted onto what is typically a bosonic thermal terminal. Remarkably, the figure of merit of the deviceis governed also by the energy distribution of the bosons participating in...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
IOP Publishing
2013-01-01
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| Series: | New Journal of Physics |
| Online Access: | https://doi.org/10.1088/1367-2630/15/7/075021 |