Van der Waals epitaxial growth and optoelectronics of a vertical MoS2/WSe2 p–n junction

Van der Waals epitaxial growth and optoelectronics of a vertical MoS2/WSe2 p–n junction

Abstract Two-dimensional (2D) transition metal dichalcogenides (TMDs) have attracted extensive attention due to their unique electronic and optical properties. In particular, TMDs can be flexibly combined to form diverse vertical van der Waals (vdWs) heterostructures without the limitation of lattic...

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Bibliographic Details
Main Authors: Yu Xiao, Junyu Qu, Ziyu Luo, Ying Chen, Xin Yang, Danliang Zhang, Honglai Li, Biyuan Zheng, Jiali Yi, Rong Wu, Wenxia You, Bo Liu, Shula Chen, Anlian Pan
Format: Article
Language:English
Published: Springer & Higher Education Press 2022-10-01
Series:Frontiers of Optoelectronics
Subjects:
MoS2
WSe2
Chemical vapor deposition (CVD)
Vertical heterostructure
Optoelectronic transistor
Online Access:https://doi.org/10.1007/s12200-022-00041-4

Internet

https://doi.org/10.1007/s12200-022-00041-4

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