Temperature-Sensitivity of Two Microwave HEMT Devices: AlGaAs/GaAs vs. AlGaN/GaN Heterostructures
The goal of this paper is to provide a comparative analysis of the thermal impact on the microwave performance of high electron-mobility transistors (HEMTs) based on GaAs and GaN technologies. To accomplish this challenging goal, the relative sensitivity of the microwave performance to changes in th...
| Main Authors: | , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2021-05-01
|
| Series: | Electronics |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-9292/10/9/1115 |