The effect of ambient temperature on the linear and nonlinear optical properties of truncated pyramidal-shaped InAs/GaAs quantum dot

The effect of ambient temperature on the linear and nonlinear optical properties of truncated pyramidal-shaped InAs/GaAs quantum dot

In this work, we calculated the energy levels of truncatedpyramidal-shaped InAs/GaAs QDs by using the finiteelement method by taking into account the ambienttemperature, because the system under study is notsymmetric, it is impossible to use the analytical methodto find the wave functions and energy...

Бүрэн тодорхойлолт

Номзүйн дэлгэрэнгүй
Үндсэн зохиолчид:	MohammadAmin ZekavatFetrat, Mohammad Sabaeian, Ghahraman Solookinejad
Формат:	Өгүүллэг
Хэл сонгох:	English
Хэвлэсэн:	Islamic Azad University, Marvdasht Branch 2021-08-01
Цуврал:	Journal of Optoelectronical Nanostructures
Нөхцлүүд:	quantum dot linear and nonlinear susceptibility ambient temperature
Онлайн хандалт:	https://jopn.marvdasht.iau.ir/article_4980_b85859949c9fac38eae20ef4d9dd6ac8.pdf

Ижил төстэй зүйлс

Quantitative strain analysis of InAs/GaAs quantum dot materials
-н: Vullum, Per Erik, зэрэг
Хэвлэсэн: (2018)

Comparative Study of Photoelectric Properties of Metamorphic InAs/InGaAs and InAs/GaAs Quantum Dot Structures
-н: Sergii Golovynskyi, зэрэг
Хэвлэсэн: (2017-05-01)

Guided self-assembly of lateral InAs/GaAs quantum-dot molecules for single molecule spectroscopy
-н: Krause B, зэрэг
Хэвлэсэн: (2006-01-01)

Effects of Thermal Annealing on the Dynamic Characteristics of InAs/GaAs Quantum Dot Lasers
-н: H. X. Zhao, зэрэг
Хэвлэсэн: (2010-01-01)

Multi-scale ordering of self-assembled InAs/GaAs(001) quantum dots
-н: Kiravittaya S, зэрэг
Хэвлэсэн: (2006-01-01)

Size and Shape Evolution of GaAsSb-Capped InAs/GaAs Quantum Dots: Dependence on the Sb Content
-н: Khairiah Alshehri, зэрэг
Хэвлэсэн: (2019-10-01)

Evolution of wetting layer in InAs/GaAs quantum dot system
-н: Chen YH, зэрэг
Хэвлэсэн: (2006-01-01)

Improvement of Performance of Modulation Response and Bandwidth of InAs/GaAs Quantum-Dot Laser Diode
-н: Thaira Z. Altayyar, зэрэг
Хэвлэсэн: (2015-06-01)

GaAs-on-insulator ridge waveguide nanobeam cavities with integrated InAs quantum dots
-н: Yueguang Zhou, зэрэг
Хэвлэсэн: (2024-01-01)

Enhanced Performance of High-Power InAs/GaAs Quantum Dot Lasers Through Indium Flushing
-н: Deyan Dai, зэрэг
Хэвлэсэн: (2025-01-01)

Influence of the Arsenic Pressure during Rapid Overgrowth of InAs/GaAs Quantum Dots on Their Photoluminescence Properties
-н: Sergey Balakirev, зэрэг
Хэвлэсэн: (2023-09-01)

The effects of wetting layer on electronic and optical properties of intersubband P-to-S transitions in strained dome-shaped InAs/GaAs quantum dots
-н: Mohammadreza Shahzadeh, зэрэг
Хэвлэсэн: (2014-06-01)

Self-assembled InAs quantum dot formation on GaAs ring-like nanostructure templates
-н: Strom NW, зэрэг
Хэвлэсэн: (2007-01-01)

Annealing-Modulated Surface Reconstruction for Self-Assembly of High-Density Uniform InAs/GaAs Quantum Dots on Large Wafers Substrate
-н: Xiangjun Shang, зэрэг
Хэвлэсэн: (2023-06-01)

Influence of GaAs Substrate Orientation on InAs Quantum Dots: Surface Morphology, Critical Thickness, and Optical Properties
-н: Liang BL, зэрэг
Хэвлэсэн: (2007-01-01)

Thin-film InGaAs metamorphic buffer for telecom C-band InAs quantum dots and optical resonators on GaAs platform
-н: Sittig Robert, зэрэг
Хэвлэсэн: (2022-02-01)

The influence of deformations on single electron states in a molecule formed from three quantum dots of the heterosystem InAs/GaAs
-н: V.B Hols'kyi, зэрэг
Хэвлэсэн: (2022-12-01)

Elimination of Bimodal Size in InAs/GaAs Quantum Dots for Preparation of 1.3-μm Quantum Dot Lasers
-н: Xiang-Bin Su, зэрэг
Хэвлэсэн: (2018-02-01)

Interplay Effect of Excitation and Temperature on Carrier Transfer between Vertically Aligned InAs/GaAs Quantum Dot Pairs
-н: Yao Liu, зэрэг
Хэвлэсэн: (2016-11-01)

Long-Wavelength InAs/GaAs Quantum-Dot Light Emitting Sources Monolithically Grown on Si Substrate
-н: Siming Chen, зэрэг
Хэвлэсэн: (2015-06-01)

1.3 µm InAs/GaAs Quantum‐Dot Lasers with p‐Type, n‐Type, and Co‐Doped Modulation
-н: Huiwen Deng, зэрэг
Хэвлэсэн: (2024-10-01)

Bipolar Effects in Photovoltage of Metamorphic InAs/InGaAs/GaAs Quantum Dot Heterostructures: Characterization and Design Solutions for Light-Sensitive Devices
-н: Sergii Golovynskyi, зэрэг
Хэвлэсэн: (2017-10-01)

High-efficiency InAs/GaAs quantum dot intermediate band solar cell achieved through current constraint engineering
-н: Tomah Sogabe, зэрэг
Хэвлэсэн: (2023-06-01)

Thermal Effects and Small Signal Modulation of 1.3-μm InAs/GaAs Self-Assembled Quantum-Dot Lasers
-н: Tong CZ, зэрэг
Хэвлэсэн: (2011-01-01)

Heterostructures on the basis of GaAs with quantum points of InAs for photo-electric transformers
-н: Maronchuk I. E., зэрэг
Хэвлэсэн: (2008-12-01)

Bright Single-Photon Sources for the Telecommunication O-Band Based on an InAs Quantum Dot with (In)GaAs Asymmetric Barriers in a Photonic Nanoantenna
-н: Maxim Rakhlin, зэрэг
Хэвлэсэн: (2022-05-01)

Erratum: “The effects of wetting layer on electronic and optical properties of intersubband P-to-S transitions in strained dome-shaped InAs/GaAs quantum dots” [AIP Advances 4, 067113 (2014)]
-н: Mohammadreza Shahzadeh, зэрэг
Хэвлэсэн: (2014-09-01)

Obtaining and doping of InAs-QD/GaAs(001) nanostructures by ion beam sputtering
-н: Sergei N. Chebotarev, зэрэг
Хэвлэсэн: (2017-01-01)

Nature of heterointerfaces in GaAs/InAs and InAs/GaAs axial nanowire heterostructures
-н: Paladugu, M, зэрэг
Хэвлэсэн: (2008)

Symmetric Excitons in an (001)-Based InAs/GaAs Quantum Dot Near Si Dopant for Photon-Pair Entanglement
-н: Xiangjun Shang, зэрэг
Хэвлэсэн: (2021-09-01)

Reduced Dislocation of GaAs Layer Grown on Ge-Buffered Si (001) Substrate Using Dislocation Filter Layers for an O-Band InAs/GaAs Quantum Dot Narrow-Ridge Laser
-н: Yong Du, зэрэг
Хэвлэсэн: (2022-09-01)

Optical properties of GaAs/Al_xGa_{1-x}As/GaAs quantum dot with off-central impurity driven by electric field
-н: V.A. Holovatsky, зэрэг
Хэвлэсэн: (2018-03-01)

Shallow Donor Impurity States with Excitonic Contribution in GaAs/AlGaAs and CdTe/CdSe Truncated Conical Quantum Dots under Applied Magnetic Field
-н: Lorenz Pulgar-Velásquez, зэрэг
Хэвлэсэн: (2021-10-01)

Temperature-Dependent Site Control of InAs/GaAs (001) Quantum Dots Using a Scanning Tunneling Microscopy Tip During Growth
-н: Toujyou Takashi, зэрэг
Хэвлэсэн: (2010-01-01)

Growth parameters of InAs/GaAs quantum dots grown by MOVPE
-н: Roslan, Sharizar, зэрэг
Хэвлэсэн: (2006)

Growth parameters of InAs/GaAs quantum dots grown by MOVPE /
-н: Zulkafli Othaman, author, зэрэг
Хэвлэсэн: (2007)

Optical properties of InAs/GaAs quantum dot superlattice structures
-н: Ali Imran, зэрэг
Хэвлэсэн: (2018-06-01)

InAs/GaAs Quantum Dot Dual-Mode Distributed Feedback Laser Towards Large Tuning Range Continuous-Wave Terahertz Application
-н: Qi-zhu Li, зэрэг
Хэвлэсэн: (2018-09-01)

Superluminescent Diodes Based on Chirped InGaAs/GaAs Quantum Well-Dot Layers
-н: Mikhail V. Maximov, зэрэг
Хэвлэсэн: (2023-09-01)

Dot-Size Dependent Excitons in Droplet-Etched Cone-Shell GaAs Quantum Dots
-н: Christian Heyn, зэрэг
Хэвлэсэн: (2022-08-01)