The effect of ambient temperature on the linear and nonlinear optical properties of truncated pyramidal-shaped InAs/GaAs quantum dot
In this work, we calculated the energy levels of truncatedpyramidal-shaped InAs/GaAs QDs by using the finiteelement method by taking into account the ambienttemperature, because the system under study is notsymmetric, it is impossible to use the analytical methodto find the wave functions and energy...
Main Authors: | MohammadAmin ZekavatFetrat, Mohammad Sabaeian, Ghahraman Solookinejad |
---|---|
Format: | Article |
Jezik: | English |
Izdano: |
Islamic Azad University, Marvdasht Branch
2021-08-01
|
Serija: | Journal of Optoelectronical Nanostructures |
Teme: | |
Online dostop: | https://jopn.marvdasht.iau.ir/article_4980_b85859949c9fac38eae20ef4d9dd6ac8.pdf |
Podobne knjige/članki
-
Quantitative strain analysis of InAs/GaAs quantum dot materials
od: Vullum, Per Erik, et al.
Izdano: (2018) -
Comparative Study of Photoelectric Properties of Metamorphic InAs/InGaAs and InAs/GaAs Quantum Dot Structures
od: Sergii Golovynskyi, et al.
Izdano: (2017-05-01) -
Guided self-assembly of lateral InAs/GaAs quantum-dot molecules for single molecule spectroscopy
od: Krause B, et al.
Izdano: (2006-01-01) -
Effects of Thermal Annealing on the Dynamic Characteristics of InAs/GaAs Quantum Dot Lasers
od: H. X. Zhao, et al.
Izdano: (2010-01-01) -
Multi-scale ordering of self-assembled InAs/GaAs(001) quantum dots
od: Kiravittaya S, et al.
Izdano: (2006-01-01)