The effect of ambient temperature on the linear and nonlinear optical properties of truncated pyramidal-shaped InAs/GaAs quantum dot
In this work, we calculated the energy levels of truncatedpyramidal-shaped InAs/GaAs QDs by using the finiteelement method by taking into account the ambienttemperature, because the system under study is notsymmetric, it is impossible to use the analytical methodto find the wave functions and energy...
Main Authors: | MohammadAmin ZekavatFetrat, Mohammad Sabaeian, Ghahraman Solookinejad |
---|---|
格式: | 文件 |
语言: | English |
出版: |
Islamic Azad University, Marvdasht Branch
2021-08-01
|
丛编: | Journal of Optoelectronical Nanostructures |
主题: | |
在线阅读: | https://jopn.marvdasht.iau.ir/article_4980_b85859949c9fac38eae20ef4d9dd6ac8.pdf |
相似书籍
-
Quantitative strain analysis of InAs/GaAs quantum dot materials
由: Vullum, Per Erik, et al.
出版: (2018) -
Comparative Study of Photoelectric Properties of Metamorphic InAs/InGaAs and InAs/GaAs Quantum Dot Structures
由: Sergii Golovynskyi, et al.
出版: (2017-05-01) -
Guided self-assembly of lateral InAs/GaAs quantum-dot molecules for single molecule spectroscopy
由: Krause B, et al.
出版: (2006-01-01) -
Effects of Thermal Annealing on the Dynamic Characteristics of InAs/GaAs Quantum Dot Lasers
由: H. X. Zhao, et al.
出版: (2010-01-01) -
Multi-scale ordering of self-assembled InAs/GaAs(001) quantum dots
由: Kiravittaya S, et al.
出版: (2006-01-01)