| Summary: | Due to their versatile and unique properties, tantalum-based thin films have been extensively studied. However, tantalum is susceptible to oxidation due to its higher chemical activity, which is crucial regardless of whether oxidations of Ta are beneficial or detrimental. Therefore, the oxidation of Ta during material processing, especially without conscious means, should be taken seriously. In this study, pure Ta films were fabricated by magnetron sputtering under set procedure parameters. The effects of base pressure and substrate temperature on the degree of oxidation of Ta films were investigated. The results revealed that the magnitude of the base pressure directly affects the oxidation state of the as-deposited Ta films. When preferably avoiding the oxidation of sputtered Ta films, the base pressure should be controlled below 4.4 × 10<sup>−4</sup> Pa. The substrate temperature has little effect on the oxidation state of the as-deposited Ta films under a base pressure ranging from about 10<sup>−2</sup> Pa to 10<sup>−4</sup>. We hope that this study can provide some references for controlling the oxidation states of Ta involved in relevant film preparation.
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