XPS Investigation of the Oxidation States of the As-Deposited Ta Films Prepared by Magnetron Sputtering Technology
Due to their versatile and unique properties, tantalum-based thin films have been extensively studied. However, tantalum is susceptible to oxidation due to its higher chemical activity, which is crucial regardless of whether oxidations of Ta are beneficial or detrimental. Therefore, the oxidation of...
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MDPI AG
2023-11-01
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| Online Access: | https://www.mdpi.com/1996-1944/16/23/7405 |
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| author | Ming Hu Zhaowang Li Xiaoming Gao Dong Jiang Zhilu Liu Longbang Guo Xu Zhao Jun He Jiayi Sun Lijun Weng Desheng Wang |
| author_facet | Ming Hu Zhaowang Li Xiaoming Gao Dong Jiang Zhilu Liu Longbang Guo Xu Zhao Jun He Jiayi Sun Lijun Weng Desheng Wang |
| author_sort | Ming Hu |
| collection | DOAJ |
| description | Due to their versatile and unique properties, tantalum-based thin films have been extensively studied. However, tantalum is susceptible to oxidation due to its higher chemical activity, which is crucial regardless of whether oxidations of Ta are beneficial or detrimental. Therefore, the oxidation of Ta during material processing, especially without conscious means, should be taken seriously. In this study, pure Ta films were fabricated by magnetron sputtering under set procedure parameters. The effects of base pressure and substrate temperature on the degree of oxidation of Ta films were investigated. The results revealed that the magnitude of the base pressure directly affects the oxidation state of the as-deposited Ta films. When preferably avoiding the oxidation of sputtered Ta films, the base pressure should be controlled below 4.4 × 10<sup>−4</sup> Pa. The substrate temperature has little effect on the oxidation state of the as-deposited Ta films under a base pressure ranging from about 10<sup>−2</sup> Pa to 10<sup>−4</sup>. We hope that this study can provide some references for controlling the oxidation states of Ta involved in relevant film preparation. |
| first_indexed | 2024-03-09T01:46:36Z |
| format | Article |
| id | doaj.art-0d2d2f167db2407b9eac92e6962a145d |
| institution | Directory Open Access Journal |
| issn | 1996-1944 |
| language | English |
| last_indexed | 2024-03-09T01:46:36Z |
| publishDate | 2023-11-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Materials |
| spelling | doaj.art-0d2d2f167db2407b9eac92e6962a145d2023-12-08T15:21:04ZengMDPI AGMaterials1996-19442023-11-011623740510.3390/ma16237405XPS Investigation of the Oxidation States of the As-Deposited Ta Films Prepared by Magnetron Sputtering TechnologyMing Hu0Zhaowang Li1Xiaoming Gao2Dong Jiang3Zhilu Liu4Longbang Guo5Xu Zhao6Jun He7Jiayi Sun8Lijun Weng9Desheng Wang10Key Laboratory of Science and Technology on Wear and Protection of Materials, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000, ChinaKey Laboratory of Science and Technology on Wear and Protection of Materials, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000, ChinaKey Laboratory of Science and Technology on Wear and Protection of Materials, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000, ChinaKey Laboratory of Science and Technology on Wear and Protection of Materials, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000, ChinaKey Laboratory of Science and Technology on Wear and Protection of Materials, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000, ChinaKey Laboratory of Science and Technology on Wear and Protection of Materials, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000, ChinaKey Laboratory of Science and Technology on Wear and Protection of Materials, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000, ChinaKey Laboratory of Science and Technology on Wear and Protection of Materials, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000, ChinaKey Laboratory of Science and Technology on Wear and Protection of Materials, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000, ChinaKey Laboratory of Science and Technology on Wear and Protection of Materials, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000, ChinaKey Laboratory of Science and Technology on Wear and Protection of Materials, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000, ChinaDue to their versatile and unique properties, tantalum-based thin films have been extensively studied. However, tantalum is susceptible to oxidation due to its higher chemical activity, which is crucial regardless of whether oxidations of Ta are beneficial or detrimental. Therefore, the oxidation of Ta during material processing, especially without conscious means, should be taken seriously. In this study, pure Ta films were fabricated by magnetron sputtering under set procedure parameters. The effects of base pressure and substrate temperature on the degree of oxidation of Ta films were investigated. The results revealed that the magnitude of the base pressure directly affects the oxidation state of the as-deposited Ta films. When preferably avoiding the oxidation of sputtered Ta films, the base pressure should be controlled below 4.4 × 10<sup>−4</sup> Pa. The substrate temperature has little effect on the oxidation state of the as-deposited Ta films under a base pressure ranging from about 10<sup>−2</sup> Pa to 10<sup>−4</sup>. We hope that this study can provide some references for controlling the oxidation states of Ta involved in relevant film preparation.https://www.mdpi.com/1996-1944/16/23/7405sputtering Ta filmXPS analysisoxidation state |
| spellingShingle | Ming Hu Zhaowang Li Xiaoming Gao Dong Jiang Zhilu Liu Longbang Guo Xu Zhao Jun He Jiayi Sun Lijun Weng Desheng Wang XPS Investigation of the Oxidation States of the As-Deposited Ta Films Prepared by Magnetron Sputtering Technology Materials sputtering Ta film XPS analysis oxidation state |
| title | XPS Investigation of the Oxidation States of the As-Deposited Ta Films Prepared by Magnetron Sputtering Technology |
| title_full | XPS Investigation of the Oxidation States of the As-Deposited Ta Films Prepared by Magnetron Sputtering Technology |
| title_fullStr | XPS Investigation of the Oxidation States of the As-Deposited Ta Films Prepared by Magnetron Sputtering Technology |
| title_full_unstemmed | XPS Investigation of the Oxidation States of the As-Deposited Ta Films Prepared by Magnetron Sputtering Technology |
| title_short | XPS Investigation of the Oxidation States of the As-Deposited Ta Films Prepared by Magnetron Sputtering Technology |
| title_sort | xps investigation of the oxidation states of the as deposited ta films prepared by magnetron sputtering technology |
| topic | sputtering Ta film XPS analysis oxidation state |
| url | https://www.mdpi.com/1996-1944/16/23/7405 |
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