Design Criteria for InGaAs/InP Single-Photon Avalanche Diode
We provide a detailed insight on the design of InGaAs/InP single-photon avalanche diode (SPAD) for 1.55- μm photon detection. In order to lower SPAD noise [the dark count rate (DCR)] without lowering photon detection efficiency (PDE) or increasing afterpulsing, it is important to optimize...
| Hlavní autoři: | , , , |
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| Médium: | Článek |
| Jazyk: | English |
| Vydáno: |
IEEE
2013-01-01
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| Edice: | IEEE Photonics Journal |
| Témata: | |
| On-line přístup: | https://ieeexplore.ieee.org/document/6504460/ |