Isotropic Contact Properties in Monolayer GeAs Field-Effect Transistors

Isotropic Contact Properties in Monolayer GeAs Field-Effect Transistors

Owing to the tunable bandgap and high thermodynamic stability, anisotropic monolayer (ML) GeAs have arisen as an attractive candidate for electronic and optoelectronic applications. The contact properties of ML GeAs with 2D metal (graphene, Ti<sub>2</sub>CF<sub>2</sub>, V<...

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Bibliographic Details
Main Authors: Weiqi Song, Haosong Liu, Feihu Zou, Yize Niu, Yue Zhao, Yao Cong, Yuanyuan Pan, Qiang Li
Format: Article
Language:English
Published: MDPI AG 2023-11-01
Series:Molecules
Subjects:
monolayer GeAs
quantum transport simulations
Schottky barrier
field-effect transistors
Online Access:https://www.mdpi.com/1420-3049/28/23/7806

Internet

https://www.mdpi.com/1420-3049/28/23/7806

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