Metal-insulator-semiconductor type diode based on implanted β-Ga2O3 epilayers grown on sapphire substrate by metalorganic chemical vapor deposition

Metal-insulator-semiconductor type diode based on implanted β-Ga2O3 epilayers grown on sapphire substrate by metalorganic chemical vapor deposition

Conductive β-Ga2O3 epilayers grown on the sapphire substrate using metalorganic chemical vapor deposition (MOCVD) were studied by Si-ion implanted. A metal-insulator-semiconductor diode (MISD) was fabricated using undoped and Si implanted β-Ga2O3 epitaxial layer. The electrical and carrier transport...

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Bibliographic Details
Main Authors: Ray-Hua Horng, Apoorva Sood, Siddharth Rana, Niall Tumity, Fu-Gow Tarntair, Catherine Langpoklakpam, Hao-Chung Kuo, Jitendra Pratap Singh
Format: Article
Language:English
Published: Elsevier 2023-06-01
Series:Materials Today Advances
Subjects:
β-Ga2O3
Metalorganic chemical vapor deposition
Metal-insulator-semiconductor diode
Online Access:http://www.sciencedirect.com/science/article/pii/S2590049823000425

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http://www.sciencedirect.com/science/article/pii/S2590049823000425

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