Fabrication of Ohmic Contact on N-Type SiC by Laser Annealed Process: A Review

Fabrication of Ohmic Contact on N-Type SiC by Laser Annealed Process: A Review

In recent years, because of stringent needs in the fabrication of silicon carbide (SiC) power devices, laser annealing has been introduced to achieve local ohmic contact. In this paper, the laser annealing research for the ohmic contact process of SiC power devices is reviewed, which is mainly divid...

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Bibliographic Details
Main Authors: Guo Li, Mingsheng Xu, Dongyang Zou, Yingxin Cui, Yu Zhong, Peng Cui, Kuan Yew Cheong, Jinbao Xia, Hongkun Nie, Shuqiang Li, Handoko Linewih, Baitao Zhang, Xiangang Xu, Jisheng Han
Format: Article
Language:English
Published: MDPI AG 2023-07-01
Series:Crystals
Subjects:
silicon carbide power device
laser annealed
ohmic contact
Online Access:https://www.mdpi.com/2073-4352/13/7/1106

Internet

https://www.mdpi.com/2073-4352/13/7/1106

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