Fabrication of Ohmic Contact on N-Type SiC by Laser Annealed Process: A Review
In recent years, because of stringent needs in the fabrication of silicon carbide (SiC) power devices, laser annealing has been introduced to achieve local ohmic contact. In this paper, the laser annealing research for the ohmic contact process of SiC power devices is reviewed, which is mainly divid...
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MDPI AG
2023-07-01
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| Series: | Crystals |
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| author | Guo Li Mingsheng Xu Dongyang Zou Yingxin Cui Yu Zhong Peng Cui Kuan Yew Cheong Jinbao Xia Hongkun Nie Shuqiang Li Handoko Linewih Baitao Zhang Xiangang Xu Jisheng Han |
| author_facet | Guo Li Mingsheng Xu Dongyang Zou Yingxin Cui Yu Zhong Peng Cui Kuan Yew Cheong Jinbao Xia Hongkun Nie Shuqiang Li Handoko Linewih Baitao Zhang Xiangang Xu Jisheng Han |
| author_sort | Guo Li |
| collection | DOAJ |
| description | In recent years, because of stringent needs in the fabrication of silicon carbide (SiC) power devices, laser annealing has been introduced to achieve local ohmic contact. In this paper, the laser annealing research for the ohmic contact process of SiC power devices is reviewed, which is mainly divided into four aspects: laser process mechanism, ohmic contact electrode materials, and substrate materials. The effect of laser parameters on ohmic contact and the annealing process on SiC diode devices is also reviewed. Progress of other substrate materials, namely 6H-SiC and semi-insulating 4H-SiC-based devices with laser annealed ohmic contacts, is also briefly discussed, in which formation of semi-insulating SiC ohmic contacts is derived from laser irradiation at the interface to produce 3C-SiC. Some experiment results have been shown in the passage, such as XRD, SEM, TEM, etc. In the review, it points out that the direction of application and development of the laser annealing process for improving the ohmic contact of SiC power devices is highly encouraging. |
| first_indexed | 2024-03-11T01:10:21Z |
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| id | doaj.art-0d6ecc4af7964eeba364a9365d05b602 |
| institution | Directory Open Access Journal |
| issn | 2073-4352 |
| language | English |
| last_indexed | 2024-03-11T01:10:21Z |
| publishDate | 2023-07-01 |
| publisher | MDPI AG |
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| series | Crystals |
| spelling | doaj.art-0d6ecc4af7964eeba364a9365d05b6022023-11-18T18:54:36ZengMDPI AGCrystals2073-43522023-07-01137110610.3390/cryst13071106Fabrication of Ohmic Contact on N-Type SiC by Laser Annealed Process: A ReviewGuo Li0Mingsheng Xu1Dongyang Zou2Yingxin Cui3Yu Zhong4Peng Cui5Kuan Yew Cheong6Jinbao Xia7Hongkun Nie8Shuqiang Li9Handoko Linewih10Baitao Zhang11Xiangang Xu12Jisheng Han13Institute of Novel Semiconductors, Shandong University, Jinan 250100, ChinaInstitute of Novel Semiconductors, Shandong University, Jinan 250100, ChinaInstitute of Novel Semiconductors, Shandong University, Jinan 250100, ChinaInstitute of Novel Semiconductors, Shandong University, Jinan 250100, ChinaInstitute of Novel Semiconductors, Shandong University, Jinan 250100, ChinaInstitute of Novel Semiconductors, Shandong University, Jinan 250100, ChinaElectronic Materials Research Group, School of Materials and Mineral Resources Engineering, University Sains Malaysia, Seberang Perai 14300, Pulau Pinang, MalaysiaInstitute of Novel Semiconductors, Shandong University, Jinan 250100, ChinaInstitute of Novel Semiconductors, Shandong University, Jinan 250100, ChinaInstitute of Novel Semiconductors, Shandong University, Jinan 250100, ChinaInstitute of Novel Semiconductors, Shandong University, Jinan 250100, ChinaInstitute of Novel Semiconductors, Shandong University, Jinan 250100, ChinaInstitute of Novel Semiconductors, Shandong University, Jinan 250100, ChinaInstitute of Novel Semiconductors, Shandong University, Jinan 250100, ChinaIn recent years, because of stringent needs in the fabrication of silicon carbide (SiC) power devices, laser annealing has been introduced to achieve local ohmic contact. In this paper, the laser annealing research for the ohmic contact process of SiC power devices is reviewed, which is mainly divided into four aspects: laser process mechanism, ohmic contact electrode materials, and substrate materials. The effect of laser parameters on ohmic contact and the annealing process on SiC diode devices is also reviewed. Progress of other substrate materials, namely 6H-SiC and semi-insulating 4H-SiC-based devices with laser annealed ohmic contacts, is also briefly discussed, in which formation of semi-insulating SiC ohmic contacts is derived from laser irradiation at the interface to produce 3C-SiC. Some experiment results have been shown in the passage, such as XRD, SEM, TEM, etc. In the review, it points out that the direction of application and development of the laser annealing process for improving the ohmic contact of SiC power devices is highly encouraging.https://www.mdpi.com/2073-4352/13/7/1106silicon carbide power devicelaser annealedohmic contact |
| spellingShingle | Guo Li Mingsheng Xu Dongyang Zou Yingxin Cui Yu Zhong Peng Cui Kuan Yew Cheong Jinbao Xia Hongkun Nie Shuqiang Li Handoko Linewih Baitao Zhang Xiangang Xu Jisheng Han Fabrication of Ohmic Contact on N-Type SiC by Laser Annealed Process: A Review Crystals silicon carbide power device laser annealed ohmic contact |
| title | Fabrication of Ohmic Contact on N-Type SiC by Laser Annealed Process: A Review |
| title_full | Fabrication of Ohmic Contact on N-Type SiC by Laser Annealed Process: A Review |
| title_fullStr | Fabrication of Ohmic Contact on N-Type SiC by Laser Annealed Process: A Review |
| title_full_unstemmed | Fabrication of Ohmic Contact on N-Type SiC by Laser Annealed Process: A Review |
| title_short | Fabrication of Ohmic Contact on N-Type SiC by Laser Annealed Process: A Review |
| title_sort | fabrication of ohmic contact on n type sic by laser annealed process a review |
| topic | silicon carbide power device laser annealed ohmic contact |
| url | https://www.mdpi.com/2073-4352/13/7/1106 |
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