Recent Advances in Fabricating Wurtzite AlN Film on (0001)-Plane Sapphire Substrate

Recent Advances in Fabricating Wurtzite AlN Film on (0001)-Plane Sapphire Substrate

Ultrawide bandgap (UWBG) semiconductor materials, with bandgaps far wider than the 3.4 eV of GaN, have attracted great attention recently. As a typical representative, wurtzite aluminum nitride (AlN) material has many advantages including high electron mobility, high breakdown voltage, high piezoele...

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Bibliographic Details
Main Authors: Hualong Wu, Kang Zhang, Chenguang He, Longfei He, Qiao Wang, Wei Zhao, Zhitao Chen
Format: Article
Language:English
Published: MDPI AG 2021-12-01
Series:Crystals
Subjects:
AlN
sapphire
ultrawide bandgap
crystal growth
dislocations
Online Access:https://www.mdpi.com/2073-4352/12/1/38

Internet

https://www.mdpi.com/2073-4352/12/1/38

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