Intersubband Transition Engineering in the Conduction Band of Asymmetric Coupled Ge/SiGe Quantum Wells

Intersubband Transition Engineering in the Conduction Band of Asymmetric Coupled Ge/SiGe Quantum Wells

<i> n</i>-type Ge/SiGe asymmetric coupled quantum wells represent the building block of a variety of nanoscale quantum devices, including recently proposed designs for a silicon-based THz quantum cascade laser. In this paper, we combine structural and spectroscopic experiments on 20-modu...

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Bibliographic Details
Main Authors: Luca Persichetti, Michele Montanari, Chiara Ciano, Luciana Di Gaspare, Michele Ortolani, Leonetta Baldassarre, Marvin Zoellner, Samik Mukherjee, Oussama Moutanabbir, Giovanni Capellini, Michele Virgilio, Monica De Seta
Format: Article
Language:English
Published: MDPI AG 2020-03-01
Series:Crystals
Subjects:
quantum wells
group iv epitaxy
intersubband transitions
silicon–germanium heterostructures
thz spectroscopy
Online Access:https://www.mdpi.com/2073-4352/10/3/179

Internet

https://www.mdpi.com/2073-4352/10/3/179

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