Improved Design of Slope-Shaped Hole-Blocking Layer and Electron-Blocking Layer in AlGaN-Based Near-Ultraviolet Laser Diodes
The injection and leakage of charge carriers have a significant impact on the optoelectronic performance of GaN-based lasers. In order to improve the limitation of the laser on charge carriers, a slope-shape hole-barrier layer (HBL) and electron-barrier layer (EBL) structure are proposed for near-UV...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2024-04-01
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| Series: | Nanomaterials |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-4991/14/7/649 |