Improved Design of Slope-Shaped Hole-Blocking Layer and Electron-Blocking Layer in AlGaN-Based Near-Ultraviolet Laser Diodes

Improved Design of Slope-Shaped Hole-Blocking Layer and Electron-Blocking Layer in AlGaN-Based Near-Ultraviolet Laser Diodes

The injection and leakage of charge carriers have a significant impact on the optoelectronic performance of GaN-based lasers. In order to improve the limitation of the laser on charge carriers, a slope-shape hole-barrier layer (HBL) and electron-barrier layer (EBL) structure are proposed for near-UV...

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Bibliographic Details
Main Authors: Maolin Gao, Jing Yang, Wei Jia, Degang Zhao, Guangmei Zhai, Hailiang Dong, Bingshe Xu
Format: Article
Language:English
Published: MDPI AG 2024-04-01
Series:Nanomaterials
Subjects:
UV laser
AlGaN
EBL
HBL
carrier
Online Access:https://www.mdpi.com/2079-4991/14/7/649

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