Contribution of Ion Energy and Flux on High-Aspect Ratio SiO<sub>2</sub> Etching Characteristics in a Dual-Frequency Capacitively Coupled Ar/C<sub>4</sub>F<sub>8</sub> Plasma: Individual Ion Energy and Flux Controlled

Contribution of Ion Energy and Flux on High-Aspect Ratio SiO<sub>2</sub> Etching Characteristics in a Dual-Frequency Capacitively Coupled Ar/C<sub>4</sub>F<sub>8</sub> Plasma: Individual Ion Energy and Flux Controlled

As the process complexity has been increased to overcome challenges in plasma etching, individual control of internal plasma parameters for process optimization has attracted attention. This study investigated the individual contribution of internal parameters, the ion energy and flux, on high-aspec...

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Bibliographic Details
Main Authors: Wonnyoung Jeong, Sijun Kim, Youngseok Lee, Chulhee Cho, Inho Seong, Yebin You, Minsu Choi, Jangjae Lee, Youbin Seol, Shinjae You
Format: Article
Language:English
Published: MDPI AG 2023-05-01
Series:Materials
Subjects:
plasma processing
plasma etching
high-aspect ratio SiO<sub>2</sub> etching
etching rate
individual plasma internal parameter control
ion flux
Online Access:https://www.mdpi.com/1996-1944/16/10/3820

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https://www.mdpi.com/1996-1944/16/10/3820

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