Thermal Annealing of the CdO/Si Hybrid Impulse Impregnated by Pulsed Iaser Deposition
In the present work, enhancement of the electrical and photovoltaic properties of CdO/ Si heterojunction device has been carried out. This has done by using classical thermal annealing process at different temperatures reaching to the optimum value at optimum of 15 sec. The device is constructed usi...
| Main Author: | |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Unviversity of Technology- Iraq
2009-10-01
|
| Series: | Engineering and Technology Journal |
| Online Access: | https://etj.uotechnology.edu.iq/article_43101_7abc3f54648ac9dbf02167b16ae3e687.pdf |