Thermal Annealing of the CdO/Si Hybrid Impulse Impregnated by Pulsed Iaser Deposition
In the present work, enhancement of the electrical and photovoltaic properties of CdO/ Si heterojunction device has been carried out. This has done by using classical thermal annealing process at different temperatures reaching to the optimum value at optimum of 15 sec. The device is constructed usi...
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| Format: | Article |
| Language: | English |
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Unviversity of Technology- Iraq
2009-10-01
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| Series: | Engineering and Technology Journal |
| Online Access: | https://etj.uotechnology.edu.iq/article_43101_7abc3f54648ac9dbf02167b16ae3e687.pdf |
| _version_ | 1797325206953394176 |
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| author | Makram AbdulMuttalib |
| author_facet | Makram AbdulMuttalib |
| author_sort | Makram AbdulMuttalib |
| collection | DOAJ |
| description | In the present work, enhancement of the electrical and photovoltaic properties of CdO/ Si heterojunction device has been carried out. This has done by using classical thermal annealing process at different temperatures reaching to the optimum value at optimum of 15 sec. The device is constructed using pulse laser deposition techniqueusing puled Nd-Yag laser of 170 mJ energy and 400ms pulse duration. The obtained results show a good enhancement at optimum annealing temperature of 448K. |
| first_indexed | 2024-03-08T06:06:15Z |
| format | Article |
| id | doaj.art-0dfe362a2a19436a96c4667ccf6fb65a |
| institution | Directory Open Access Journal |
| issn | 1681-6900 2412-0758 |
| language | English |
| last_indexed | 2024-03-08T06:06:15Z |
| publishDate | 2009-10-01 |
| publisher | Unviversity of Technology- Iraq |
| record_format | Article |
| series | Engineering and Technology Journal |
| spelling | doaj.art-0dfe362a2a19436a96c4667ccf6fb65a2024-02-04T17:50:12ZengUnviversity of Technology- IraqEngineering and Technology Journal1681-69002412-07582009-10-01271450050610.30684/etj.27.14.1943101Thermal Annealing of the CdO/Si Hybrid Impulse Impregnated by Pulsed Iaser DepositionMakram AbdulMuttalibIn the present work, enhancement of the electrical and photovoltaic properties of CdO/ Si heterojunction device has been carried out. This has done by using classical thermal annealing process at different temperatures reaching to the optimum value at optimum of 15 sec. The device is constructed using pulse laser deposition techniqueusing puled Nd-Yag laser of 170 mJ energy and 400ms pulse duration. The obtained results show a good enhancement at optimum annealing temperature of 448K.https://etj.uotechnology.edu.iq/article_43101_7abc3f54648ac9dbf02167b16ae3e687.pdf |
| spellingShingle | Makram AbdulMuttalib Thermal Annealing of the CdO/Si Hybrid Impulse Impregnated by Pulsed Iaser Deposition Engineering and Technology Journal |
| title | Thermal Annealing of the CdO/Si Hybrid Impulse Impregnated by Pulsed Iaser Deposition |
| title_full | Thermal Annealing of the CdO/Si Hybrid Impulse Impregnated by Pulsed Iaser Deposition |
| title_fullStr | Thermal Annealing of the CdO/Si Hybrid Impulse Impregnated by Pulsed Iaser Deposition |
| title_full_unstemmed | Thermal Annealing of the CdO/Si Hybrid Impulse Impregnated by Pulsed Iaser Deposition |
| title_short | Thermal Annealing of the CdO/Si Hybrid Impulse Impregnated by Pulsed Iaser Deposition |
| title_sort | thermal annealing of the cdo si hybrid impulse impregnated by pulsed iaser deposition |
| url | https://etj.uotechnology.edu.iq/article_43101_7abc3f54648ac9dbf02167b16ae3e687.pdf |
| work_keys_str_mv | AT makramabdulmuttalib thermalannealingofthecdosihybridimpulseimpregnatedbypulsediaserdeposition |