Tailoring Threshold Voltages of Printed Electrolyte-Gated Field-Effect Transistors by Chromium Doping of Indium Oxide Channels

Tailoring Threshold Voltages of Printed Electrolyte-Gated Field-Effect Transistors by Chromium Doping of Indium Oxide Channels

Bibliographic Details
Main Authors: Felix Neuper, Abhinav Chandresh, Surya Abhishek Singaraju, Jasmin Aghassi-Hagmann, Horst Hahn, Ben Breitung
Format: Article
Language:English
Published: American Chemical Society 2019-11-01
Series:ACS Omega
Online Access:https://doi.org/10.1021/acsomega.9b02513

Internet

https://doi.org/10.1021/acsomega.9b02513

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