InGaAs x-ray photodiode for spectroscopy
A prototype In _0.53 Ga _0.47 As p ^+ -i-n ^+ x-ray photodiode, fabricated from material grown by metalorganic vapour phase epitaxy, was investigated as a novel detector of x-rays. The detector was connected to a custom low-noise charge sensitive preamplifier and standard readout electronics to prod...
| Main Authors: | , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
IOP Publishing
2020-01-01
|
| Series: | Materials Research Express |
| Subjects: | |
| Online Access: | https://doi.org/10.1088/2053-1591/abbaf9 |