Spin injection, relaxation, and manipulation in GaN-based semiconductors
ABSTRACTGaN-based semiconductors are deemed to be a potential candidate for developing spintronic devices owing to the artificially controllable spin-orbit coupling and the high Curie temperature of GaN-based diluted magnetic semiconductors. Spin injection, spin relaxation dynamics, and spin manipul...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Taylor & Francis Group
2023-12-01
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| Series: | Advances in Physics: X |
| Subjects: | |
| Online Access: | https://www.tandfonline.com/doi/10.1080/23746149.2022.2158757 |