An Analysis of Mobility Influence in Optoelectronics Parameters in an InGaN/GaN Blue LED

An Analysis of Mobility Influence in Optoelectronics Parameters in an InGaN/GaN Blue LED

Simulations on mobility influence in optoelectronics parameters from an InGaN/GaN blue LED using the Nextnano++ software arepresented in this paper. These simulations were performed by changing the hole and electron mobility value for the material compounds according to experimental, theoretical, an...

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Bibliographic Details
Main Authors: Sarai Zarate-Galvez, Abel Garcia-Barrientos, Roberto Ambrosio-Lazaro, Mario Garcia-Ramirez, Enrique Stevens-Navarro, Jairo Plaza-Castillo, Jose Hoyo-Montaño, Obed Perez-Cortes
Format: Article
Language:English
Published: MDPI AG 2022-08-01
Series:Crystals
Subjects:
InGaN/GaN
blue light emitting diodes
quantum efficiency
quantum drift-diffusion model
Online Access:https://www.mdpi.com/2073-4352/12/8/1108

Internet

https://www.mdpi.com/2073-4352/12/8/1108

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