Enhancing Design Stability and Flexibility in Partial Isolation Type LDMOS

Enhancing Design Stability and Flexibility in Partial Isolation Type LDMOS

This study comprehensively analyzes the performance variation mechanisms in partial isolation type laterally double-diffused metal-oxide-semiconductor (Pi-LDMOS) field-effect transistors. The concept of the ’silicon gap’ in this study refers to the space between the drift regio...

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Bibliographic Details
Main Authors: Shinwook Kim, Dongyeong Kim, Suyeon Kim, Je Won Park, Hyerin Lee, Hyeona Seo, Sowon Kim, Chaehyuk Lim, Jeonghyeon Yun, Juwon Lee, Sokhee P. Jung, Myoung Jin Lee
Format: Article
Language:English
Published: IEEE 2025-01-01
Series:IEEE Access
Subjects:
Breakdown voltage (BV)
figure of merit (FOM)
partial insulator (Pi)
lateral double-diffused metal-oxide semiconductor (LDMOS)
silicon gap
Online Access:https://ieeexplore.ieee.org/document/10908852/

Internet

https://ieeexplore.ieee.org/document/10908852/

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