Tunable Resistive Switching Behaviors and Mechanism of the W/ZnO/ITO Memory Cell

Tunable Resistive Switching Behaviors and Mechanism of the W/ZnO/ITO Memory Cell

A facile sol–gel spin coating method has been proposed for the synthesis of spin-coated ZnO nanofilms on ITO substrates. The as-prepared ZnO-nanofilm-based W/ZnO/ITO memory cell showed forming-free and tunable nonvolatile multilevel resistive switching behaviors with a high resistance ratio of about...

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Bibliographic Details
Main Authors: Zhiqiang Yu, Jinhao Jia, Xinru Qu, Qingcheng Wang, Wenbo Kang, Baosheng Liu, Qingquan Xiao, Tinghong Gao, Quan Xie
Format: Article
Language:English
Published: MDPI AG 2023-07-01
Series:Molecules
Subjects:
sol–gel
ZnO nanofilms
nonvolatile
multilevel
oxygen vacancies
Online Access:https://www.mdpi.com/1420-3049/28/14/5313

Internet

https://www.mdpi.com/1420-3049/28/14/5313

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