Area-Selective Atomic Layer Deposition of ZnO on Si\SiO<sub>2</sub> Modified with Tris(dimethylamino)methylsilane

Area-Selective Atomic Layer Deposition of ZnO on Si\SiO<sub>2</sub> Modified with Tris(dimethylamino)methylsilane

Delayed atomic layer deposition (ALD) of ZnO, i.e., area selective (AS)-ALD, was successfully achieved on silicon wafers (Si\SiO<sub>2</sub>) terminated with tris(dimethylamino)methylsilane (TDMAMS). This resist molecule was deposited in a home-built, near-atmospheric pressure, flow-thro...

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Bibliographic Details
Main Authors: Behnam Moeini, Tahereh G. Avval, Hidde H. Brongersma, Stanislav Průša, Pavel Bábík, Elena Vaníčková, Brian R. Strohmeier, David S. Bell, Dennis Eggett, Steven M. George, Matthew R. Linford
Format: Article
Language:English
Published: MDPI AG 2023-06-01
Series:Materials
Subjects:
area selective
atomic layer deposition
silane
silicon
inhibitor
ZnO
Online Access:https://www.mdpi.com/1996-1944/16/13/4688

Internet

https://www.mdpi.com/1996-1944/16/13/4688

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