A Critical Review of Techniques for the Experimental Extraction of the Thermal Resistance of Bipolar Transistors from DC Measurements—Part I: Thermometer-Based Approaches

A Critical Review of Techniques for the Experimental Extraction of the Thermal Resistance of Bipolar Transistors from DC Measurements—Part I: Thermometer-Based Approaches

This paper presents a critical and detailed overview of experimental techniques for the extraction of the thermal resistance of bipolar transistors from simple DC current/voltage measurements. More specifically, this study focuses on techniques based on a thermometer, i.e., the relation between the...

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Bibliographic Details
Main Authors: Vincenzo d’Alessandro, Antonio Pio Catalano, Ciro Scognamillo, Markus Müller, Michael Schröter, Peter J. Zampardi, Lorenzo Codecasa
Format: Article
Language:English
Published: MDPI AG 2023-08-01
Series:Electronics
Subjects:
bipolar transistor model
gallium arsenide (GaAs)
heterojunction bipolar transistor (HBT)
nonlinear thermal effects
silicon-germanium (SiGe)
thermal resistance
Online Access:https://www.mdpi.com/2079-9292/12/16/3471

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https://www.mdpi.com/2079-9292/12/16/3471

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