A Critical Review of Techniques for the Experimental Extraction of the Thermal Resistance of Bipolar Transistors from DC Measurements—Part I: Thermometer-Based Approaches
This paper presents a critical and detailed overview of experimental techniques for the extraction of the thermal resistance of bipolar transistors from simple DC current/voltage measurements. More specifically, this study focuses on techniques based on a thermometer, i.e., the relation between the...
| Main Authors: | , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2023-08-01
|
| Series: | Electronics |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-9292/12/16/3471 |
| _version_ | 1797584874386751488 |
|---|---|
| author | Vincenzo d’Alessandro Antonio Pio Catalano Ciro Scognamillo Markus Müller Michael Schröter Peter J. Zampardi Lorenzo Codecasa |
| author_facet | Vincenzo d’Alessandro Antonio Pio Catalano Ciro Scognamillo Markus Müller Michael Schröter Peter J. Zampardi Lorenzo Codecasa |
| author_sort | Vincenzo d’Alessandro |
| collection | DOAJ |
| description | This paper presents a critical and detailed overview of experimental techniques for the extraction of the thermal resistance of bipolar transistors from simple DC current/voltage measurements. More specifically, this study focuses on techniques based on a thermometer, i.e., the relation between the base-emitter voltage and the junction temperature. The theory behind the techniques is described with a unified and comprehensible nomenclature. Advantages, underlying approximations, and limitations of the methods are illustrated. The accuracy is assessed by emulating the DC measurements with PSPICE electrothermal simulations of a transistor model, applying the techniques to the simulated currents/voltages, and comparing the extracted thermal resistance data with the values obtained from the target formulation embedded in the transistor model. An InGaP/GaAs HBT and an Si/SiGe HBT for high-frequency applications are considered as case-studies. |
| first_indexed | 2024-03-10T23:58:55Z |
| format | Article |
| id | doaj.art-0f0b307529194897a9bd1b9175dd43b9 |
| institution | Directory Open Access Journal |
| issn | 2079-9292 |
| language | English |
| last_indexed | 2024-03-10T23:58:55Z |
| publishDate | 2023-08-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Electronics |
| spelling | doaj.art-0f0b307529194897a9bd1b9175dd43b92023-11-19T00:54:11ZengMDPI AGElectronics2079-92922023-08-011216347110.3390/electronics12163471A Critical Review of Techniques for the Experimental Extraction of the Thermal Resistance of Bipolar Transistors from DC Measurements—Part I: Thermometer-Based ApproachesVincenzo d’Alessandro0Antonio Pio Catalano1Ciro Scognamillo2Markus Müller3Michael Schröter4Peter J. Zampardi5Lorenzo Codecasa6Department of Electrical Engineering and Information Technology, University Federico II, 80125 Naples, ItalyDepartment of Electrical Engineering and Information Technology, University Federico II, 80125 Naples, ItalyDepartment of Electrical Engineering and Information Technology, University Federico II, 80125 Naples, ItalyChair for Electron Devices and Integrated Circuits, TU Dresden, 01069 Dresden, GermanyChair for Electron Devices and Integrated Circuits, TU Dresden, 01069 Dresden, GermanyQorvo, Inc., Newbury Park, CA 91320, USADepartment of Electronics, Information, and Bioengineering, Politecnico di Milano, 20133 Milan, ItalyThis paper presents a critical and detailed overview of experimental techniques for the extraction of the thermal resistance of bipolar transistors from simple DC current/voltage measurements. More specifically, this study focuses on techniques based on a thermometer, i.e., the relation between the base-emitter voltage and the junction temperature. The theory behind the techniques is described with a unified and comprehensible nomenclature. Advantages, underlying approximations, and limitations of the methods are illustrated. The accuracy is assessed by emulating the DC measurements with PSPICE electrothermal simulations of a transistor model, applying the techniques to the simulated currents/voltages, and comparing the extracted thermal resistance data with the values obtained from the target formulation embedded in the transistor model. An InGaP/GaAs HBT and an Si/SiGe HBT for high-frequency applications are considered as case-studies.https://www.mdpi.com/2079-9292/12/16/3471bipolar transistor modelgallium arsenide (GaAs)heterojunction bipolar transistor (HBT)nonlinear thermal effectssilicon-germanium (SiGe)thermal resistance |
| spellingShingle | Vincenzo d’Alessandro Antonio Pio Catalano Ciro Scognamillo Markus Müller Michael Schröter Peter J. Zampardi Lorenzo Codecasa A Critical Review of Techniques for the Experimental Extraction of the Thermal Resistance of Bipolar Transistors from DC Measurements—Part I: Thermometer-Based Approaches Electronics bipolar transistor model gallium arsenide (GaAs) heterojunction bipolar transistor (HBT) nonlinear thermal effects silicon-germanium (SiGe) thermal resistance |
| title | A Critical Review of Techniques for the Experimental Extraction of the Thermal Resistance of Bipolar Transistors from DC Measurements—Part I: Thermometer-Based Approaches |
| title_full | A Critical Review of Techniques for the Experimental Extraction of the Thermal Resistance of Bipolar Transistors from DC Measurements—Part I: Thermometer-Based Approaches |
| title_fullStr | A Critical Review of Techniques for the Experimental Extraction of the Thermal Resistance of Bipolar Transistors from DC Measurements—Part I: Thermometer-Based Approaches |
| title_full_unstemmed | A Critical Review of Techniques for the Experimental Extraction of the Thermal Resistance of Bipolar Transistors from DC Measurements—Part I: Thermometer-Based Approaches |
| title_short | A Critical Review of Techniques for the Experimental Extraction of the Thermal Resistance of Bipolar Transistors from DC Measurements—Part I: Thermometer-Based Approaches |
| title_sort | critical review of techniques for the experimental extraction of the thermal resistance of bipolar transistors from dc measurements part i thermometer based approaches |
| topic | bipolar transistor model gallium arsenide (GaAs) heterojunction bipolar transistor (HBT) nonlinear thermal effects silicon-germanium (SiGe) thermal resistance |
| url | https://www.mdpi.com/2079-9292/12/16/3471 |
| work_keys_str_mv | AT vincenzodalessandro acriticalreviewoftechniquesfortheexperimentalextractionofthethermalresistanceofbipolartransistorsfromdcmeasurementspartithermometerbasedapproaches AT antoniopiocatalano acriticalreviewoftechniquesfortheexperimentalextractionofthethermalresistanceofbipolartransistorsfromdcmeasurementspartithermometerbasedapproaches AT ciroscognamillo acriticalreviewoftechniquesfortheexperimentalextractionofthethermalresistanceofbipolartransistorsfromdcmeasurementspartithermometerbasedapproaches AT markusmuller acriticalreviewoftechniquesfortheexperimentalextractionofthethermalresistanceofbipolartransistorsfromdcmeasurementspartithermometerbasedapproaches AT michaelschroter acriticalreviewoftechniquesfortheexperimentalextractionofthethermalresistanceofbipolartransistorsfromdcmeasurementspartithermometerbasedapproaches AT peterjzampardi acriticalreviewoftechniquesfortheexperimentalextractionofthethermalresistanceofbipolartransistorsfromdcmeasurementspartithermometerbasedapproaches AT lorenzocodecasa acriticalreviewoftechniquesfortheexperimentalextractionofthethermalresistanceofbipolartransistorsfromdcmeasurementspartithermometerbasedapproaches AT vincenzodalessandro criticalreviewoftechniquesfortheexperimentalextractionofthethermalresistanceofbipolartransistorsfromdcmeasurementspartithermometerbasedapproaches AT antoniopiocatalano criticalreviewoftechniquesfortheexperimentalextractionofthethermalresistanceofbipolartransistorsfromdcmeasurementspartithermometerbasedapproaches AT ciroscognamillo criticalreviewoftechniquesfortheexperimentalextractionofthethermalresistanceofbipolartransistorsfromdcmeasurementspartithermometerbasedapproaches AT markusmuller criticalreviewoftechniquesfortheexperimentalextractionofthethermalresistanceofbipolartransistorsfromdcmeasurementspartithermometerbasedapproaches AT michaelschroter criticalreviewoftechniquesfortheexperimentalextractionofthethermalresistanceofbipolartransistorsfromdcmeasurementspartithermometerbasedapproaches AT peterjzampardi criticalreviewoftechniquesfortheexperimentalextractionofthethermalresistanceofbipolartransistorsfromdcmeasurementspartithermometerbasedapproaches AT lorenzocodecasa criticalreviewoftechniquesfortheexperimentalextractionofthethermalresistanceofbipolartransistorsfromdcmeasurementspartithermometerbasedapproaches |