Dose dependence of tensoresistance for the symmetrical orientation of the deformation axis relatively to all isoenergetic ellipsoids in γ-irradiated (60Co) n-Si crystals

The dose dependence of tensoresistance X /0, which was measured at the symmetrical orientation of the deformation axis (compression) relatively to all isoenergetic ellipsoids both in the initial and in -irradiated samples, was investigated in n-Si crystals. It has been shown that changing the irr...

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Bibliographic Details
Main Author: G.P. Gaidar
Format: Article
Language:English
Published: National Academy of Sciences of Ukraine. Institute of Semi conductor physics. 2018-03-01
Series:Semiconductor Physics, Quantum Electronics & Optoelectronics
Subjects:
Online Access:http://journal-spqeo.org.ua/n1_2018/P048-053abstr.html