Impact of nitrogen annealing on the electrical properties of HgCdTe epitaxial films

The nitrogen annealing of HgCdTe materials grown by molecular beam epitaxy (MBE) was carried out to manipulate their electrical properties. The results show that the annealing temperature, annealing time and cooling process all have significant influences on the electrical properties of HgCdTe mater...

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Bibliographic Details
Main Authors: Dapeng Jin, Songmin Zhou, Lu Chen, Chun Lin, Li He
Format: Article
Language:English
Published: IOP Publishing 2023-01-01
Series:Materials Research Express
Subjects:
Online Access:https://doi.org/10.1088/2053-1591/acdf40