Impact of nitrogen annealing on the electrical properties of HgCdTe epitaxial films
The nitrogen annealing of HgCdTe materials grown by molecular beam epitaxy (MBE) was carried out to manipulate their electrical properties. The results show that the annealing temperature, annealing time and cooling process all have significant influences on the electrical properties of HgCdTe mater...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
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IOP Publishing
2023-01-01
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| Series: | Materials Research Express |
| Subjects: | |
| Online Access: | https://doi.org/10.1088/2053-1591/acdf40 |
| _version_ | 1827868761139445760 |
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| author | Dapeng Jin Songmin Zhou Lu Chen Chun Lin Li He |
| author_facet | Dapeng Jin Songmin Zhou Lu Chen Chun Lin Li He |
| author_sort | Dapeng Jin |
| collection | DOAJ |
| description | The nitrogen annealing of HgCdTe materials grown by molecular beam epitaxy (MBE) was carried out to manipulate their electrical properties. The results show that the annealing temperature, annealing time and cooling process all have significant influences on the electrical properties of HgCdTe materials. Excessive annealing temperature or long annealing time can make voids emerge on the surface of the CdTe passivation layer. Carrier concentration and mobility vary exponentially with annealing time and they reach an equilibrium value determined by annealing temperature over a long annealing duration. Moreover, time constants are given and a longer time is needed for mobility to reach an equilibrium value than carrier concentration. The relationship between equilibrium carrier concentration and annealing temperature is given and the activation energy under nitrogen annealing is calculated as 0.63 eV. For a long cooling duration, Hg vacancies are annihilated by Hg atoms diffusion, which makes carrier concentration lower and mobility higher. In addition, some outlier data were found in this experiment and explained by the combination between Te antisites and Hg vacancies. |
| first_indexed | 2024-03-12T15:36:58Z |
| format | Article |
| id | doaj.art-0f23b4d472c04ce6828f13799e1d13c0 |
| institution | Directory Open Access Journal |
| issn | 2053-1591 |
| language | English |
| last_indexed | 2024-03-12T15:36:58Z |
| publishDate | 2023-01-01 |
| publisher | IOP Publishing |
| record_format | Article |
| series | Materials Research Express |
| spelling | doaj.art-0f23b4d472c04ce6828f13799e1d13c02023-08-09T16:10:27ZengIOP PublishingMaterials Research Express2053-15912023-01-0110707630210.1088/2053-1591/acdf40Impact of nitrogen annealing on the electrical properties of HgCdTe epitaxial filmsDapeng Jin0https://orcid.org/0000-0002-5768-9617Songmin Zhou1Lu Chen2Chun Lin3Li He4Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, People’s Republic of China; School of Information Science and Technology, ShanghaiTech University , Shanghai 201210, People’s Republic of China; University of Chinese Academy of Sciences , Beijing 100049, People’s Republic of ChinaKey Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, People’s Republic of ChinaKey Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, People’s Republic of ChinaKey Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, People’s Republic of China; School of Information Science and Technology, ShanghaiTech University , Shanghai 201210, People’s Republic of ChinaKey Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, People’s Republic of ChinaThe nitrogen annealing of HgCdTe materials grown by molecular beam epitaxy (MBE) was carried out to manipulate their electrical properties. The results show that the annealing temperature, annealing time and cooling process all have significant influences on the electrical properties of HgCdTe materials. Excessive annealing temperature or long annealing time can make voids emerge on the surface of the CdTe passivation layer. Carrier concentration and mobility vary exponentially with annealing time and they reach an equilibrium value determined by annealing temperature over a long annealing duration. Moreover, time constants are given and a longer time is needed for mobility to reach an equilibrium value than carrier concentration. The relationship between equilibrium carrier concentration and annealing temperature is given and the activation energy under nitrogen annealing is calculated as 0.63 eV. For a long cooling duration, Hg vacancies are annihilated by Hg atoms diffusion, which makes carrier concentration lower and mobility higher. In addition, some outlier data were found in this experiment and explained by the combination between Te antisites and Hg vacancies.https://doi.org/10.1088/2053-1591/acdf40HgCdTenitrogen annealingcarrier concentrationmobility |
| spellingShingle | Dapeng Jin Songmin Zhou Lu Chen Chun Lin Li He Impact of nitrogen annealing on the electrical properties of HgCdTe epitaxial films Materials Research Express HgCdTe nitrogen annealing carrier concentration mobility |
| title | Impact of nitrogen annealing on the electrical properties of HgCdTe epitaxial films |
| title_full | Impact of nitrogen annealing on the electrical properties of HgCdTe epitaxial films |
| title_fullStr | Impact of nitrogen annealing on the electrical properties of HgCdTe epitaxial films |
| title_full_unstemmed | Impact of nitrogen annealing on the electrical properties of HgCdTe epitaxial films |
| title_short | Impact of nitrogen annealing on the electrical properties of HgCdTe epitaxial films |
| title_sort | impact of nitrogen annealing on the electrical properties of hgcdte epitaxial films |
| topic | HgCdTe nitrogen annealing carrier concentration mobility |
| url | https://doi.org/10.1088/2053-1591/acdf40 |
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