High-Performance a-InGaZnO Thin-Film Transistors with Extremely Low Thermal Budget by Using a Hydrogen-Rich Al2O3 Dielectric

High-Performance a-InGaZnO Thin-Film Transistors with Extremely Low Thermal Budget by Using a Hydrogen-Rich Al2O3 Dielectric

Abstract Electrical characteristics of amorphous In-Ga-Zn-O (a-IGZO) thin-film transistors (TFTs) are compared by using O2 plasma-enhanced atomic layer deposition Al2O3 dielectrics at different temperatures. High-performance a-IGZO TFTs are demonstrated successfully with an Al2O3 dielectric deposite...

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Bibliographic Details
Main Authors: Yan Shao, Xiaohan Wu, Mei-Na Zhang, Wen-Jun Liu, Shi-Jin Ding
Format: Article
Language:English
Published: SpringerOpen 2019-04-01
Series:Nanoscale Research Letters
Subjects:
Amorphous In-Ga-Zn-O
Thin-film transistor
Room temperature
Atomic layer deposition
Hydrogen-rich Al2O3
Online Access:http://link.springer.com/article/10.1186/s11671-019-2959-1

Internet

http://link.springer.com/article/10.1186/s11671-019-2959-1

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