Engineering of Grain Boundaries in CeO2 Enabling Tailorable Resistive Switching Properties

Engineering of Grain Boundaries in CeO2 Enabling Tailorable Resistive Switching Properties

Abstract Defect engineering in valence change memories aimed at tuning the concentration and transport of oxygen vacancies are studied extensively, however mostly focusing on contribution from individual extended defects such as single dislocations and grain boundaries. In this work, the impact of e...

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Bibliographic Details
Main Authors: Hongyi Dou, Markus Hellenbrand, Ming Xiao, Zedong Hu, Sundar Kunwar, Aiping Chen, Judith L. MacManus‐Driscoll, Quanxi Jia, Haiyan Wang
Format: Article
Language:English
Published: Wiley-VCH 2023-05-01
Series:Advanced Electronic Materials
Subjects:
cerium oxide
defect engineering
grain boundary
memristors
resistive switching
Online Access:https://doi.org/10.1002/aelm.202201186

Internet

https://doi.org/10.1002/aelm.202201186

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