Simulation study of front-illuminated GaN avalanche photodiodes with hole-initiated multiplication
A flip-chip GaN p-i-n-i-n avalanche photodiode (APD) which integrates the merits of the prevailing APDs—hole-initiated multiplication process and front-illumination is proposed and studied via simulation. The simulation parameters used were firstly calibrated with a fabricated PiN diode. With a 200-...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Taylor & Francis Group
2020-01-01
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| Series: | Cogent Engineering |
| Subjects: | |
| Online Access: | http://dx.doi.org/10.1080/23311916.2020.1764171 |