Surface-Potential-Based Compact Modeling of p-GaN Gate HEMTs

Surface-Potential-Based Compact Modeling of p-GaN Gate HEMTs

We propose a surface potential (SP)-based compact model of p-GaN gate high electron mobility transistors (HEMTs) which solves the Poisson equation. The model includes all possible charges in the GaN channel layer, including the unintended Mg doping density caused by out-diffusion. The SP equation an...

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Bibliographic Details
Main Authors: Jie Wang, Zhanfei Chen, Shuzhen You, Benoit Bakeroot, Jun Liu, Stefaan Decoutere
Format: Article
Language:English
Published: MDPI AG 2021-02-01
Series:Micromachines
Subjects:
p-GaN gate high-electron mobility transistors
compact model
physics-based models
surface potential
Online Access:https://www.mdpi.com/2072-666X/12/2/199

Internet

https://www.mdpi.com/2072-666X/12/2/199

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