Surface-Potential-Based Compact Modeling of p-GaN Gate HEMTs
We propose a surface potential (SP)-based compact model of p-GaN gate high electron mobility transistors (HEMTs) which solves the Poisson equation. The model includes all possible charges in the GaN channel layer, including the unintended Mg doping density caused by out-diffusion. The SP equation an...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
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MDPI AG
2021-02-01
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| Series: | Micromachines |
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| Online Access: | https://www.mdpi.com/2072-666X/12/2/199 |
| _version_ | 1797396497198743552 |
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| author | Jie Wang Zhanfei Chen Shuzhen You Benoit Bakeroot Jun Liu Stefaan Decoutere |
| author_facet | Jie Wang Zhanfei Chen Shuzhen You Benoit Bakeroot Jun Liu Stefaan Decoutere |
| author_sort | Jie Wang |
| collection | DOAJ |
| description | We propose a surface potential (SP)-based compact model of p-GaN gate high electron mobility transistors (HEMTs) which solves the Poisson equation. The model includes all possible charges in the GaN channel layer, including the unintended Mg doping density caused by out-diffusion. The SP equation and its analytical approximate solution provide a high degree of accuracy for the SP calculation, from which the closed-form I–V equations are derived. The proposed model uses physical parameters only and is implemented in Verilog-A code. |
| first_indexed | 2024-03-09T00:52:09Z |
| format | Article |
| id | doaj.art-0f5a90e5b8834821857e7ebc451392cd |
| institution | Directory Open Access Journal |
| issn | 2072-666X |
| language | English |
| last_indexed | 2024-03-09T00:52:09Z |
| publishDate | 2021-02-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Micromachines |
| spelling | doaj.art-0f5a90e5b8834821857e7ebc451392cd2023-12-11T17:07:55ZengMDPI AGMicromachines2072-666X2021-02-0112219910.3390/mi12020199Surface-Potential-Based Compact Modeling of p-GaN Gate HEMTsJie Wang0Zhanfei Chen1Shuzhen You2Benoit Bakeroot3Jun Liu4Stefaan Decoutere5The Key Laboratory for RF Circuit and Systems of Ministry of Education, Hangzhou Dianzi University, Hangzhou 310012, ChinaThe Key Laboratory for RF Circuit and Systems of Ministry of Education, Hangzhou Dianzi University, Hangzhou 310012, ChinaInteruniversity Microelectronics Centre (IMEC), Kapeldreef 75, B-3001 Leuven, BelgiumCMST, IMEC, Ghent University, Technologiepark 126, B-9052 Ghent, BelgiumThe Key Laboratory for RF Circuit and Systems of Ministry of Education, Hangzhou Dianzi University, Hangzhou 310012, ChinaInteruniversity Microelectronics Centre (IMEC), Kapeldreef 75, B-3001 Leuven, BelgiumWe propose a surface potential (SP)-based compact model of p-GaN gate high electron mobility transistors (HEMTs) which solves the Poisson equation. The model includes all possible charges in the GaN channel layer, including the unintended Mg doping density caused by out-diffusion. The SP equation and its analytical approximate solution provide a high degree of accuracy for the SP calculation, from which the closed-form I–V equations are derived. The proposed model uses physical parameters only and is implemented in Verilog-A code.https://www.mdpi.com/2072-666X/12/2/199p-GaN gate high-electron mobility transistorscompact modelphysics-based modelssurface potential |
| spellingShingle | Jie Wang Zhanfei Chen Shuzhen You Benoit Bakeroot Jun Liu Stefaan Decoutere Surface-Potential-Based Compact Modeling of p-GaN Gate HEMTs Micromachines p-GaN gate high-electron mobility transistors compact model physics-based models surface potential |
| title | Surface-Potential-Based Compact Modeling of p-GaN Gate HEMTs |
| title_full | Surface-Potential-Based Compact Modeling of p-GaN Gate HEMTs |
| title_fullStr | Surface-Potential-Based Compact Modeling of p-GaN Gate HEMTs |
| title_full_unstemmed | Surface-Potential-Based Compact Modeling of p-GaN Gate HEMTs |
| title_short | Surface-Potential-Based Compact Modeling of p-GaN Gate HEMTs |
| title_sort | surface potential based compact modeling of p gan gate hemts |
| topic | p-GaN gate high-electron mobility transistors compact model physics-based models surface potential |
| url | https://www.mdpi.com/2072-666X/12/2/199 |
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