Impact of annealing on the growth dynamics of indium sulphide buffer layers
Thin films of Indium sulphide are deposited on corning glass substrate by thermal evaporation at room temperature (300 K). The as-deposited films were annealed from 373 to 723 K under vacuum ∼1 × 10−3 mbar. An amorphous phase is obtained from 300 to 473 K; the polycrystalline β-In2S3 emerges at 523 ...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2022-11-01
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| Series: | Journal of Materials Research and Technology |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2238785422015010 |