On-State Current Degradation Owing to Displacement Defect by Terrestrial Cosmic Rays in Nanosheet FET

On-State Current Degradation Owing to Displacement Defect by Terrestrial Cosmic Rays in Nanosheet FET

Silicon displacement defects are caused by various effects. For instance, epitaxial crystalline silicon growth and ion implantation often result in defects induced by the fabrication process, whereas displacement damage is induced by terrestrial cosmic radiation. Clustered displacement damage report...

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Bibliographic Details
Main Authors: Jonghyeon Ha, Gyeongyeop Lee, Hagyoul Bae, Kihyun Kim, Jin-Woo Han, Jungsik Kim
Format: Article
Language:English
Published: MDPI AG 2022-08-01
Series:Micromachines
Subjects:
displacement defect
nanosheet field-effect-transistor
cosmic ray
terrestrial radiation
technology computer-aided design (TCAD)
Sentaurus device-QTX
Online Access:https://www.mdpi.com/2072-666X/13/8/1276

Internet

https://www.mdpi.com/2072-666X/13/8/1276

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