Electronic properties of Cu2(Zn, Cd)SnS4 determined by the high-field magnetotransport

Electronic properties of Cu2(Zn, Cd)SnS4 determined by the high-field magnetotransport

Resistivity, ρ ( T ), and magnetoresistance (MR) are investigated in the Cu _2 Zn _1− _x Cd _x SnS _4 single crystals for compositions x ≡ Cd/(Zn + Cd) = 0.15–0.24, in the temperature range of T ∼ 50–300 K in pulsed magnetic fields of B up to 20 T. The Mott variable-range hopping (VRH) conductivity...

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Bibliographic Details
Main Authors: Erkki Lähderanta, Elena Hajdeu-Chicarosh, Victor Kravtsov, Mikhail A Shakhov, Vladimir N Stamov, Ivan V Bodnar, Ernest Arushanov, Konstantin G Lisunov
Format: Article
Language:English
Published: IOP Publishing 2022-01-01
Series:New Journal of Physics
Subjects:
semiconductors
Cu2(Zn, Cd)SnS4
electrical transport
disordered systems
magnetoresistance
high magnetic fields
Online Access:https://doi.org/10.1088/1367-2630/ac8b9f

Internet

https://doi.org/10.1088/1367-2630/ac8b9f

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