Atomic Layer Deposition of Ru Thin Film Using a Newly Synthesized Precursor with Open‐Coordinated Ligands

Atomic Layer Deposition of Ru Thin Film Using a Newly Synthesized Precursor with Open‐Coordinated Ligands

Abstract Ru films are grown on Pt, TiN, and SiO2 substrates via atomic layer deposition (ALD) using Ru(II)(η5‐C7H7O)(η5‐C7H9) as the novel Ru metalorganic precursor and O2 as the reactant. The ALD self‐limiting film growth is confirmed at the low temperature of 200 °C by manipulating the injection t...

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Bibliographic Details
Main Authors: Seung Hoon Oh, Jeong Min Hwang, Hyeonbin Park, Dongseong Park, Young Eun Song, Eun Chong Ko, Tae Joo Park, Taeyong Eom, Taek‐Mo Chung
Format: Article
Language:English
Published: Wiley-VCH 2023-06-01
Series:Advanced Materials Interfaces
Subjects:
atomic layer deposition
microelectronics
precursor
ruthenium
thin film
Online Access:https://doi.org/10.1002/admi.202202445

Internet

https://doi.org/10.1002/admi.202202445

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