One-volt oxide based complementary circuit
In low-power electronics, there is a substantial demand for high-performance p-type oxide thin-film transistors (TFTs) that are capable of efficient operation at low voltages. In this study, we employ anodization to form an aluminum oxide gate dielectric layer, enabling the fabrication of p-type tin...
| Main Authors: | , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2024-07-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0215815 |