Tunnel Field-Effect Transistors: Prospects and Challenges
The tunnel field-effect transistor (TFET) is considered a future transistor option due to its steep-slope prospects and the resulting advantages in operating at low supply voltage (V<sub>DD</sub>). In this paper, using atomistic quantum models that are in agreement with experimental TFET...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2015-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/7006647/ |