Raman scattering excitation in monolayers of semiconducting transition metal dichalcogenides

Abstract Raman scattering excitation (RSE) is an experimental technique in which the spectrum is made up by sweeping the excitation energy when the detection energy is fixed. We study the low-temperature (T = 5 K) RSE spectra measured on four high quality monolayers (ML) of semiconducting transition...

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Bibliographic Details
Main Authors: M. Zinkiewicz, M. Grzeszczyk, T. Kazimierczuk, M. Bartos, K. Nogajewski, W. Pacuski, K. Watanabe, T. Taniguchi, A. Wysmołek, P. Kossacki, M. Potemski, A. Babiński, M. R. Molas
Format: Article
Language:English
Published: Nature Portfolio 2024-01-01
Series:npj 2D Materials and Applications
Online Access:https://doi.org/10.1038/s41699-023-00438-5