Growth mechanism and characteristics of β-Ga2O3 heteroepitaxailly grown on sapphire by metalorganic chemical vapor deposition
In this study, monoclinic gallium oxide (β-Ga2O3) epilayer was successfully grown on c-plane, (0001), sapphire substrate by metalorganic chemical vapor deposition (MOCVD) with interplaying growth temperature, TEGa flow rate, and growth time. X-ray diffraction 2θ scans show only three narrow diffract...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2022-12-01
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| Series: | Materials Today Advances |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2590049822001163 |