Observation and Measurement of Negative Differential Resistance on PtSi Schottky Junctions on Porous Silicon

Observation and Measurement of Negative Differential Resistance on PtSi Schottky Junctions on Porous Silicon

Nanosize porous Si is made by two step controlled etching of Si. The first etching step is carried on the Si surface and the second is performed after deposition of 75 Å of platinum on the formed surface. A platinum silicide structure with a size of less than 25 nm is formed on the porous Si surface...

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Bibliographic Details
Main Authors: Mansor Mohtashamifar, Majidreza Aliahmadi, Alireza Erfanian, Hassan Hajghassem, Seyedeh Maryam Banihashemian, Seyed Mohamadhosein Mosakazemi
Format: Article
Language:English
Published: MDPI AG 2010-01-01
Series:Sensors
Subjects:
nanoporous Si
platinum silicide
quantum tunneling effect
negative differential resistance
Online Access:http://www.mdpi.com/1424-8220/10/2/1012/

Internet

http://www.mdpi.com/1424-8220/10/2/1012/

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