Effect of Al Concentration on Ferroelectric Properties in HfAlOx‐Based Ferroelectric Tunnel Junction Devices for Neuroinspired Applications
Since HfOx‐based ferroelectric tunnel junctions (FTJs) are attractive compared to perovskite‐based FTJs and other emerging memory devices, they are being actively studied recently. They have advantages such as a simple metal–insulator–metal structure, complementary metal oxide semiconductor (CMOS) c...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2023-08-01
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| Series: | Advanced Intelligent Systems |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/aisy.202300080 |