Effect of Al Concentration on Ferroelectric Properties in HfAlOx‐Based Ferroelectric Tunnel Junction Devices for Neuroinspired Applications
Since HfOx‐based ferroelectric tunnel junctions (FTJs) are attractive compared to perovskite‐based FTJs and other emerging memory devices, they are being actively studied recently. They have advantages such as a simple metal–insulator–metal structure, complementary metal oxide semiconductor (CMOS) c...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
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Wiley
2023-08-01
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| Series: | Advanced Intelligent Systems |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/aisy.202300080 |
| _version_ | 1827862851075702784 |
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| author | Jihyung Kim Dahye Kim Kyung Kyu Min Matthias Kraatz Taeyoung Han Sungjun Kim |
| author_facet | Jihyung Kim Dahye Kim Kyung Kyu Min Matthias Kraatz Taeyoung Han Sungjun Kim |
| author_sort | Jihyung Kim |
| collection | DOAJ |
| description | Since HfOx‐based ferroelectric tunnel junctions (FTJs) are attractive compared to perovskite‐based FTJs and other emerging memory devices, they are being actively studied recently. They have advantages such as a simple metal–insulator–metal structure, complementary metal oxide semiconductor (CMOS) compatibility, non‐destructive operation, and low power consumption. Moreover, doped HfOx‐based FTJs are in the spotlight in terms of neuromorphic engineering as a way of advancing from the von Neumann structure. In particular, Al dopant is effective for inducing ferroelectric properties due to its smaller radius than that of Hf. The optimal concentration of Al varies depending on the device materials and the annealing conditions during deposition. Therefore, in‐depth research is required for neuromorphic applications. Herein, the properties of FTJ devices according to Al doping concentrations are analyzed. Subsequently, using the device with the highest remanent polarization, neuromorphic applications are implemented, including spike‐timing‐dependent plasticity (STDP), paired‐pulse facilitation (PPF), long‐term potentiation, and depression. The characteristics in different frequency regions are also studied to satisfy the demand for fast switching. Finally, the FTJ device is used as a physical reservoir in reservoir computing for efficient processing of time‐dependent inputs. |
| first_indexed | 2024-03-12T14:00:26Z |
| format | Article |
| id | doaj.art-0fe514f84f9b49379b2d75b5d5dfaea1 |
| institution | Directory Open Access Journal |
| issn | 2640-4567 |
| language | English |
| last_indexed | 2024-03-12T14:00:26Z |
| publishDate | 2023-08-01 |
| publisher | Wiley |
| record_format | Article |
| series | Advanced Intelligent Systems |
| spelling | doaj.art-0fe514f84f9b49379b2d75b5d5dfaea12023-08-22T05:33:15ZengWileyAdvanced Intelligent Systems2640-45672023-08-0158n/an/a10.1002/aisy.202300080Effect of Al Concentration on Ferroelectric Properties in HfAlOx‐Based Ferroelectric Tunnel Junction Devices for Neuroinspired ApplicationsJihyung Kim0Dahye Kim1Kyung Kyu Min2Matthias Kraatz3Taeyoung Han4Sungjun Kim5Division of Electronics and Electrical Engineering Dongguk University Seoul 04620 South KoreaDivision of Electronics and Electrical Engineering Dongguk University Seoul 04620 South KoreaDepartment of Electrical and Computer Engineering and Inter-university Semiconductor Research Center Seoul National University Seoul 08826 Republic of KoreaNanomechanics and Reliability for Microelectronics Fraunhofer IKTS 01109 Dresden GermanyBiodegradation and Nanofunctionalization Fraunhofer IKTS Maria-Reiche-Str.2 01109 Dresden GermanyDivision of Electronics and Electrical Engineering Dongguk University Seoul 04620 South KoreaSince HfOx‐based ferroelectric tunnel junctions (FTJs) are attractive compared to perovskite‐based FTJs and other emerging memory devices, they are being actively studied recently. They have advantages such as a simple metal–insulator–metal structure, complementary metal oxide semiconductor (CMOS) compatibility, non‐destructive operation, and low power consumption. Moreover, doped HfOx‐based FTJs are in the spotlight in terms of neuromorphic engineering as a way of advancing from the von Neumann structure. In particular, Al dopant is effective for inducing ferroelectric properties due to its smaller radius than that of Hf. The optimal concentration of Al varies depending on the device materials and the annealing conditions during deposition. Therefore, in‐depth research is required for neuromorphic applications. Herein, the properties of FTJ devices according to Al doping concentrations are analyzed. Subsequently, using the device with the highest remanent polarization, neuromorphic applications are implemented, including spike‐timing‐dependent plasticity (STDP), paired‐pulse facilitation (PPF), long‐term potentiation, and depression. The characteristics in different frequency regions are also studied to satisfy the demand for fast switching. Finally, the FTJ device is used as a physical reservoir in reservoir computing for efficient processing of time‐dependent inputs.https://doi.org/10.1002/aisy.202300080Al concentrationsferroelectric tunnel junctionsfrequency-dependent switching neuromorphic applicationsreservoir computing |
| spellingShingle | Jihyung Kim Dahye Kim Kyung Kyu Min Matthias Kraatz Taeyoung Han Sungjun Kim Effect of Al Concentration on Ferroelectric Properties in HfAlOx‐Based Ferroelectric Tunnel Junction Devices for Neuroinspired Applications Advanced Intelligent Systems Al concentrations ferroelectric tunnel junctions frequency-dependent switching neuromorphic applications reservoir computing |
| title | Effect of Al Concentration on Ferroelectric Properties in HfAlOx‐Based Ferroelectric Tunnel Junction Devices for Neuroinspired Applications |
| title_full | Effect of Al Concentration on Ferroelectric Properties in HfAlOx‐Based Ferroelectric Tunnel Junction Devices for Neuroinspired Applications |
| title_fullStr | Effect of Al Concentration on Ferroelectric Properties in HfAlOx‐Based Ferroelectric Tunnel Junction Devices for Neuroinspired Applications |
| title_full_unstemmed | Effect of Al Concentration on Ferroelectric Properties in HfAlOx‐Based Ferroelectric Tunnel Junction Devices for Neuroinspired Applications |
| title_short | Effect of Al Concentration on Ferroelectric Properties in HfAlOx‐Based Ferroelectric Tunnel Junction Devices for Neuroinspired Applications |
| title_sort | effect of al concentration on ferroelectric properties in hfalox based ferroelectric tunnel junction devices for neuroinspired applications |
| topic | Al concentrations ferroelectric tunnel junctions frequency-dependent switching neuromorphic applications reservoir computing |
| url | https://doi.org/10.1002/aisy.202300080 |
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